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If you use this dataset please add this citation to your publication:
Shahani, Ashwin; Gulsoy, E. Begum; Poulsen, Stefan O.; Xiao, Xianghui; Voorhees, Peter W., "Twin-mediated Crystal Growth: an Enigma Resolved," 2016, http://dx.doi.org/doi:10.18126/M2301J
Full metadata record
DC FieldValueLanguage
dc.contributor.authorShahani, Ashwin-
dc.contributor.authorGulsoy, E. Begum-
dc.contributor.authorPoulsen, Stefan O.-
dc.contributor.authorXiao, Xianghui-
dc.contributor.authorVoorhees, Peter W.-
dc.date.accessioned2016-06-15T20:11:50Z-
dc.date.available2016-06-15T20:11:50Z-
dc.date.issued2016-06-15-
dc.identifier.urihttp://dx.doi.org/doi:10.18126/M2301J-
dc.publisherMaterials Data Facilityen_US
dc.subject4D materials scienceen_US
dc.subjectAl-Si-Cu alloysen_US
dc.subjectin situen_US
dc.subjectsolidificationen_US
dc.subjectgrowthen_US
dc.subjectfacetsen_US
dc.subjectdefectsen_US
dc.subjecttwinsen_US
dc.subjecttwinningen_US
dc.subjectanisotropyen_US
dc.subjectsynchrotronen_US
dc.subjectX-ray computed tomographyen_US
dc.titleTwin-mediated Crystal Growth: an Enigma Resolveden_US
globus.shared_endpoint.name82f1b5c6-6e9b-11e5-ba47-22000b92c6ec-
globus.shared_endpoint.path/published/publication_113/-
datacite.creator.affiliationNorthwestern Universityen_US
datacite.creator.affiliationArgonne National Laboratoryen_US
datacite.contributor.ContactPersonAshwin J. Shahani (shahani@u.northwestern.edu)en_US
mdf-gibbs.funding_detailsMultidisciplinary University Research Initiative (grant AFOSR FA9550-12-1-0458)en_US
mdf-gibbs.funding_detailsNSF Graduate Research Fellowship Program (grant DGE-1324585)en_US
mdf-gibbs.funding_detailsDOE (grant DE-FG02-99ER45782)en_US
mdf-gibbs.material_typemetalen_US
mdf-gibbs.material_typesemiconductoren_US
mdf-gibbs.material_compositionAl-Si-Cuen_US
mdf-gibbs.structurebulken_US
mdf-gibbs.structurecrystallineen_US
mdf-gibbs.structurefluiden_US
mdf-gibbs.structureinterphaseen_US
mdf-gibbs.material_classdiffusionen_US
mdf-gibbs.material_classthermodynamicen_US
mdf-gibbs.material_classkineticen_US
mdf-gibbs.data_acquisition_methodX-ray computed tomographyen_US
mdf-gibbs.data_acquisition_locationBeamline 2-BM at Advanced Photon Sourceen_US
mdf-gibbs.data_acquisition_locationArgonne National Laboratoryen_US
mdf-gibbs.data_acquisition_locationAPSen_US
mdf-gibbs.data_acquisition_locationANLen_US
mdf-gibbs.primary_productraw projection dataen_US
mdf-gibbs.data_encodingHDF5en_US
mdf-gibbs.keywords4D materials scienceen_US
mdf-gibbs.keywordsAl-Si-Cu alloysen_US
mdf-gibbs.keywordsin situen_US
mdf-gibbs.keywordssolidificationen_US
mdf-gibbs.keywordsgrowthen_US
mdf-gibbs.keywordsfacetsen_US
mdf-gibbs.keywordsdefectsen_US
mdf-gibbs.keywordstwinsen_US
mdf-gibbs.keywordstwinningen_US
mdf-gibbs.keywordsanisotropyen_US
mdf-gibbs.keywordssynchrotronen_US
mdf-gibbs.keywordsX-ray computed tomographyen_US
mdf-gibbs.descriptionThis data was collected to study the growth behavior of faceted Si particles in an Al-Si-Cu liquid, upon continuous cooling. The as-cast, hyper-eutectic sample consisted of primary Si particles in a eutectic matrix. Upon heating to above the liquidus temperature for Si (here, we heat to 910 C), the Si particles melted, leaving behind a featureless liquid. Then, the sample temperature was lowered at a rate of 1 C per minute while projections were recorded. After a brief incubation period, the Si particles grew from the oxide skin of the sample into the liquid. The weight fraction of Si particles at temperature was consistent with predictions from equilibrium, indicating that the growth of solid Si can keep up with the quench rate. Nevertheless, the morphologies of the Si particles were not given by the equilibrium shape of Si due to the prevalence of defects during the growth process. Identifying the crystallography and dynamics of these defects (including twin boundaries that intersect the solid-liquid interfaces) was central to this work. The raw data were obtained in the following sequence: for the first 20 min, projections were collected continuously, providing a temporal resolution of 30 s between subsequent 3D reconstructions; for the next 120 minutes, 40 more tomographic scans with the same parameters were spaced 150 s apart. Thus, 80 scans were collected over the course of over 2 hours. The motivation for collecting the X-ray projections in this manner was that the system-average length-scale increased logarithmically with time during bulk diffusion-limited growth. Therefore, this data collection scheme adequately captured the interfacial dynamics. The data here includes the raw projections. Note that dark field and flat field measurements, which are used to normalize the data, are in a separate file. For details on the data processing and quantitative analysis, the reader is pointed to the following publication. Correspondence should be directed to Ashwin J. Shahani (shahani@u.northwestern.edu).en_US
mdf-gibbs.sample_prefixD2_cont (for discrete measurements)en_US
mdf-gibbs.sample_prefixD2_cont (for continuous measurements)en_US
mdf-gibbs.experiment_holding_temperatureSample was held at 910 C prior to data collection. This is above the liquidus temperature for Si for the alloy composition of interest. Then, the sample temperature was lowered at a rate of 1 C per minute while tomographic projections were recorded. Note that the temperature corresponding to a given 3D reconstruction can be calculated using this information and the time-stamp of each HDF file.en_US
mdf-gibbs.experiment_holding_temperature910 Cen_US
mdf-gibbs.experiment_xray_energypink beamen_US
mdf-gibbs.experiment_nominal_alloy_compositionAl (53 wt%); Si (32 wt%), Cu (15 wt%)en_US
mdf-gibbs.experiment_nominal_alloy_compositionAl 53 wt%en_US
mdf-gibbs.experiment_nominal_alloy_compositionSi 32 wt%en_US
mdf-gibbs.experiment_nominal_alloy_compositionCu 15 wt%en_US
mdf-gibbs.experiment_pixel_size0.65 micrometers per voxelen_US
mdf-gibbs.experiment_pixel_size0.65 umen_US
mdf-gibbs.processing_segmentation_methodmedian filtering and morphological operationsen_US
mdf-gibbs.processing_reconstruction_methodGridrec algorithmen_US
Appears in Collections:Voorhees Group



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